器件名称: FZT857
功能描述: SOT223 NPN SILICON PLANAR HIGH CURRENT
文件大小: 46.15KB 共3页
简 介:SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR
ISSUE 5 - AUGUST 2003 FEATURES * Up to 3.5 Amps continuous collector current, up to 5 Amp peak * VCEO = 300V * Very low saturation voltage * Excellent hFE specified up to 3 Amps PARTMARKING DETAIL COMPLEMENTARY TYPE FZT857 FZT957
FZT857
C
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE 350 300 6 5 3.5 3 -55 to +150 UNIT V V V A A W °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 2 inches square.
FZT857
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CER V (BR)CEO V (BR)EBO I CBO MIN. 350 TYP. 475 MAX. UNIT V CONDITIONS. I C=100 A I C =1 A, RB ≤ 1k I C=10mA* I E=100 A V CB=300V V CB=300V, T amb=100°C V CB=300V V CB=300V, T amb=100°C V EB=6V I C=500mA, I B=50mA* I C=1A, I B=100mA* I C=2A, I B=200mA* I C=3.5A, I B=600mA* I C=3.5A, I B=600mA* I C =3.5A, V CE=10V* I C=10mA, V CE=5V I C=500mA, V CE=10V* I C=2A, V CE=10V* I C=3A, V CE=10V* MHz I C==100mA, V CE=10V f=50MHz V CB=20V, f=1MH……
