器件名称: FZT658
功能描述: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
文件大小: 89.67KB 共2页
简 介:SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ISSUE 4 - OCTOBER 1995 FEATURES * 400 Volt VCEO * Low saturation voltage
FZT658
C
E COMPLEMENTARY TYPE PARTMARKING DETAIL FZT758 FZT658 C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltage SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff 50 50 40 50 10 130 3300 MHz pF ns ns 400 400 5 100 100 0.3 0.25 0.5 0.9 1.0 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MAX. UNIT V V V nA nA V V V V V VALUE 400 400 5 1 0.5 2 -55 to +150 CONDITIONS. IC=100A IC=10mA* IE=100A VCB=320V VEB=4V IC=20mA, IB=1mA* IC=50mA, IB=5mA* IC=100mA, IB=10mA IC=100mA, IB=10mA* IC=100mA, VCE=5V* IC=1mA, VCE=5V* IC=100mA, VCE=5V* IC=200mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz IC=100mA, VCC=100V IB1=10mA, IB2=-20mA UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
*Measured under pulsed conditions. Pulse Width=300s. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 215
FZT658
TYPICAL CHARACTE……
