器件名称: 2SC4548
功能描述: NPN EPITAXIAL PLANAR TRANSISTOR
文件大小: 399.2KB 共3页
简 介:2SC4548
NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
1. BASE 2. COLLECTOR 3. EMITTER
1
2
3
SOT-89
ABSOLUTE MAXIMUM RATINGS(TA=25C Unless Otherwise Noted) Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Total Device Disspation TA=25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Value 400 400 5 200 500 +150 -55 to +150 Unit V V V mA mW C C
WEITRON
http://www.weitron.com.tw
1/3
03-Jun-10
2SC4548
ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=10A, IE=0 Collector-Emitter Breakdown Voltage IC=1mA, IB=0 Emitter-Base Breakdown Voltage IE=10A, IC=0 Collector Cut-O Current VCB=300V, IE =0 Emitter-Cut-O Current VEB=4V, I C=0 ON CHARACTERISTICS DC Current Gain VCE=10V, IC =50mA Collector-Emitter Saturation Voltage IC=50mA, IB =5mA Base-Emitter Saturation Voltage IC=50mA, IB =5mA DYNAMIC CHARACTERISTICS Transition Frequency VCE=30V, IC =10mA Output Capacitance VCB=30V, IE =0, f=1MHz Turn-ON Time VCC=150V, I C=50mA, IB1=-IB2=5mA Turn-OFF Time VCC=150V, I C=50mA, IB1=-IB2=5mA CLASSIFICATION OF hFE Rank Range Marking D 60-120 CN E 100-200 fT Cob t on to 70 4.0 0.25 5.0 MHz pF S S hFE VCE(sat) VBE(sat) 60 200 0.6 1.0 V V Symbol BVCBO BVCEO BVEBO ICBO IEBO Min 400 400 5.0 Typ Max 0.1 0.1 Unit V V V A A
WEITRON
http://www.weitron.com.tw
2/3
03-Jun-10
2SC4548
SOT-89 Outline Dimensions
unit:mm
E G
Dim
A
SOT-89
J
C
H
K L
B
D
A B C D E G H J K L……
