器件名称: FZT869
功能描述: SOT223 NPN SILICON PLANAR HIGH CURRENT
文件大小: 39.48KB 共2页
简 介:SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR
ISSUE 2 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36m at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp * Ptot =3 Watts PARTMARKING DETAILS FZT869
FZT869
C
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 60 25 6 20 7 3 -55 to +150 UNIT V V V A A W °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 inch square minimum
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FZT869
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R ≤1k IEBO VCE(sat) 35 67 168 MIN. 60 60 25 6 TYP. 120 120 35 8 50 1 50 1 10 50 110 215 350 1.2 1.13 300 300 200 40 450 450 300 100 100 70 60 680 MHz pF ns ns MAX. UNIT V V V V nA nA nA mV mV mV mV V V CONDITIONS. IC=100A IC=1A, RB ≤1k IC=10mA* IE=100A VCB=50V VCB=50V, Tamb=100°C VC……
