器件名称: FZT1151A
功能描述: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
文件大小: 108.09KB 共4页
简 介:PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -40V * 3 Amp Continuous Current * 5 Amp Pulse Current * Low saturation Voltage * High Gain
FZT1151A
C
E C B SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -45 -40 -5 -5 -3 -500 2.5 -55 to +150 UNIT V V V A A mA W °C
Operating and Storage Temperature Range
The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 2 inches x 2 inches
FZT1151A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
VALUE
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current
SYMBOL MIN. V (BR)CBO V CES V CEO V CEV V (BR)EBO I CBO -45 -40 -40 -40 -5 TYP. -95 -90 -85 -90 -8.5 -0.3 -0.3 -0.3 -60 -120 -140 -170 -200 -985 -850 270 250 180 100 450 400 300 190 45 145 40 170 460 -100 -100 -100 -90 -180 -220 -260 -300 -1100 -1000 MAX.
UNIT V V V V V nA nA nA mV mV mV mV mV mV mV
CONDITIONS. I C=-100 A I C =-100 A I C =-10mA * I C =-100 A, V EB=+1V I E=-100 A V CB=-36V V EB=-4V V CE =-32V I C=-0.1A, I B=-1.0mA* I C=-0.5A, I B=-5mA* I C=-1A, I B=-20mA* I C=-1.8A, I B=-70mA* I C=-3A, I B=……
