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   首页 > VISAY > Si1013X-T1-E3

Si1013X-T1-E3

器件名称: Si1013X-T1-E3
功能描述: P-Channel 1.8-V (G-S) MOSFET
文件大小: 94.34KB    共6页
生产厂商: VISAY
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简  介:Si1013R/X Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 1.2 at VGS = - 4.5 V - 20 1.6 at VGS = - 2.5 V 2.7 at VGS = - 1.8 V ID (mA) - 350 - 300 - 150 FEATURES Halogen-free Option Available High-Side Switching Low On-Resistance: 1.2 Ω Low Threshold: 0.8 V (Typ.) Fast Switching Speed: 14 ns 1.8 V Operation TrenchFET Power MOSFETs RoHS COMPLIANT 2000 V ESD Protection APPLICATIONS SC-75A or SC-89 G 1 3 D S 2 SC-75A (SOT-416): Si1013R - Marking Code D SC-89 (SOT-490): Si1013X - Marking Code B Top View Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers BENEFITS Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation Ordering Information: Si1013R-T1-E3 (SC-75A, Lead (Pb)-free) Si1013R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1013X-T1-E3 (SC-89, Lead (Pb)-free) Si1013X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Currenta TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C TJ, Tstg ESD PD TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS - 275 175 90 275 160 - 55 to 150 2000 - 400 - 300 - 1000 - 250 150 80 250 140 °C V mW 5s ±6 - 350 - 275 mA Steady State - 20 Unit V Continuous ……
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器件名 功能描述 生产厂商
Si1013X-T1-E3 P-Channel 1.8-V (G-S) MOSFET VISAY
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