器件名称: Si1013X-T1-E3
功能描述: P-Channel 1.8-V (G-S) MOSFET
文件大小: 94.34KB 共6页
简 介:Si1013R/X
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) 1.2 at VGS = - 4.5 V - 20 1.6 at VGS = - 2.5 V 2.7 at VGS = - 1.8 V ID (mA) - 350 - 300 - 150
FEATURES
Halogen-free Option Available High-Side Switching Low On-Resistance: 1.2 Ω Low Threshold: 0.8 V (Typ.) Fast Switching Speed: 14 ns 1.8 V Operation TrenchFET Power MOSFETs
RoHS
COMPLIANT
2000 V ESD Protection
APPLICATIONS
SC-75A or SC-89
G 1
3
D
S
2
SC-75A (SOT-416): Si1013R - Marking Code D SC-89 (SOT-490): Si1013X - Marking Code B
Top View
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
BENEFITS
Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
Ordering Information: Si1013R-T1-E3 (SC-75A, Lead (Pb)-free) Si1013R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1013X-T1-E3 (SC-89, Lead (Pb)-free) Si1013X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Currenta TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C TJ, Tstg ESD PD TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS - 275 175 90 275 160 - 55 to 150 2000 - 400 - 300 - 1000 - 250 150 80 250 140 °C V mW 5s ±6 - 350 - 275 mA Steady State - 20 Unit V
Continuous ……
