器件名称: Si1012R
功能描述: N-Channel 1.8-V (G-S) MOSFET
文件大小: 108.39KB 共8页
简 介:Si1012R/X
Vishay Siliconix
N-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) 0.70 at VGS = 4.5 V 20 0.85 at VGS = 2.5 V 1.25 at VGS = 1.8 V ID (mA) 600 500 350
FEATURES
Halogen-free Option Available TrenchFET Power MOSFET: 1.8 V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 0.7 Ω Low Threshold: 0.8 V (typ.) Fast Switching Speed: 10 ns
RoHS
COMPLIANT
SC-75A or SC-89
APPLICATIONS
G 1
3
D
S
2 Top View
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
BENEFITS
Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
ORDERING INFORMATION
Part Number Si1012R-T1-E3 (Lead (Pb)-free) Si1012R-T1-GE3 (Lead (Pb)-free and Halogen-free) Si1012X-T1-E3 (Lead (Pb)-free) Si1012X-T1-GE3 (Lead (Pb)-free and Halogen-free) Package SC-75A (SOT-416) SC-89 (SOT-490) Marking Code C
A
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Current
a
Symbol VDS VGS TA = 25 °C TA = 85 °C ID IDM IS TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C TJ, Tstg ESD PD
5s 20 ±6 600 400 1000 275 175 90 275 160
Steady State
Unit V
500 350 250 150 80 250 140 - 55 to 150 2000 °C V mW mA
Continuous Source Current (Diode Conduction)b Maximum Power Dissipation……
