器件名称: FZT717TA
功能描述: SOT223 PNP medium power transistor
文件大小: 360.48KB 共6页
简 介:FZT717 SOT223 PNP medium power transistor
Summary
BVCEO = -12V; IC = 3A
Description
Packaged in the SOT223 outline this low saturation 12V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
Features
2W power dissipation 3A continuous current Excellent hFE characteristics up to 10A (pulsed) Low saturation voltage
C
B
E
Applications
Battery charging MOSFET and IGBT gate driving Motor drive
E C
Tape width (mm) 12 Quantity per reel
Ordering information
Device FZT717TA Reel size (inches) 7
C B Pinout - top view
1,000
Device marking
FZT717
Issue 2 - September 2006
Zetex Semiconductors plc 2006
1
www.zetex.com
FZT717
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current(a) Base current Power dissipation at Tamb =25°C(a) Linear derating factor Operating and storage temperature range Symbol BVCBO BVCEO BVEBO ICM IC IB PD Tj, Tstg Limit -12 -12 -5 -10 -3 -500 2 -55 to +150 Unit V V V A A mA W °C
Thermal resistance
Parameter Junction to ambient Symbol RJA Limit 62.5 Unit °C/W
NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
Issue 2 - September 2006
Zetex Semiconductors plc 2006
2
www.zetex.com
FZT717
Typical characteristics
Issue 2 - September 2006
Zetex Semiconductors plc 2006
3……
