器件名称: 2SC4215
功能描述: NPN Silicon Transistor
文件大小: 604.37KB 共4页
简 介:2SC4215
NPN Silicon Transistor
P b Lead(Pb)-Free
1 3
FEATURES:
* Power dissipation
1. BASE 2. EMITTER 3. COLLECTOR
2
SOT-323(SC-70)
SOT-323 Outline Demensions
A
Unit:mm
SOT-323
B C
TOP VIEW
D E G H K L
J
M
Dim A B C D E G H J K L M
Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10
Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25
WEITRON
http://www.weitron.com.tw
1/4
20-Jan-2011
2SC4215
Maximum Ratings ( TA=25°C unless otherwise noted)
Rating
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
WEITRON
Symbol
VCBO VCEO VEBO IC PD TJ Tstg
Value
40 30 4 20 100 150 -55 to +150
Unit
V V V mA mW °C °C
ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise specified)
Parameter Collector-base breakdown voltage
I C = 100A, I E =0
Symbol
V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO hFE fT Cre C C rbb NF Gpe
Min 40 30 4 40 260 17
Typ 550 0.55 2 23
Max 0.1 0.5 200 25 5 -
Unit V V V A A MHz pF pS dB dB
Collector-emitter breakdown voltage
I C = 1mA, I B =0
Emitter-base breakdown voltage
I E = 100A, I C =0 VCB =40V, I E =0 VEB =4V, IC =0
DC current gain
VCE =6V, I C = 1mA
Transition frequency
VCE =6V,I C =1mA
Reverse transfer capacitance
VCB =10V, f =1MHz
Collector-base time constant
V CB =6V,I C =1mA, f=30MHz V CC =6V,I C =1mA,f =100MHz
Power gain
V CC =6V,I C =1mA,f =100MHz
CLASSIFICATION OF hFE
Rank Range Marking R 40-80 QR O 70-……
