器件名称: FZT1049A
功能描述: SOT 223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
文件大小: 208.33KB 共3页
简 介:SOT 223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 2 - JUNE 2007
FZT1049A
C
FEATURES * * * * * * VCEO = 25V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 50m at 5A
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE 80 25 5 20 5 500 2.5 -55 to +150 UNIT V V V A A mA W °C
The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.
FZT1049A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL MIN. V(BR)CBO 80 TYP. 130 MAX. UNIT V CONDITIONS. IC=100A IC=100A * IC=10mA IC=100A, VEB=1V IE=100A
VCES
80 25
130 30 V
V
VCEO
VCEV
80
130
V
Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage ICBO IEBO ICES
5
9
V
0.3 0.3 0.3
10 10 10
nA nA nA
VCB=35V VEB=4V VCES=35V IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=30mA* IC=5A, IB=50mA* IC=5A, IB=50mA*
VCE(sat)
35 70 180 2……
