器件名称: 2SC4604_04
功能描述: Power Amplifier Application Power Switching Applications.
文件大小: 122.53KB 共4页
简 介:2SC4604
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4604
Power Amplifier Application. Power Switching Applications.
Unit: mm
Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) High-speed switching: tstg = 0.5 s (typ.) Complementary to 2SA1761
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 50 6 3 0.6 900 150 55 to 150 Unit V V V A A mW °C °C
JEDEC JEITA TOSHIBA
TO-92MOD ― 2-5J1A
Weight: 0.36 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton IB1 Test Condition VCB = 80 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IE = 0 VCE = 2 V, IC = 100 mA VCE = 2 V, IC = 2 A IC = 1.5 A, IB = 75 mA IC = 1.5 A, IB = 75 mA VCE = 2 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Output 30 Min ― ― 50 120 40 ― ― ― ― ― Typ. ― ― ― ― ― ― ― 100 20 0.1 Max 0.1 0.1 ― 400 ― 0.5 1.2 ― ― ― V V MHz pF Unit A A V
20 s
Input IB2
IB1 IB2
Switching time
Storage time
tstg
―
0.5
―
s
30 V Fall time tf IB1 = IB2 = 75 m……
