器件名称: FZT690B
功能描述: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
文件大小: 108.25KB 共2页
简 介:NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995 FEATURES * Very low equivalent on-resistance; RCE(sat) 125m at 2A * Gain of 400 at IC=1 Amp * Very low saturation voltage APPLICATIONS * Darlington replacement * Siren Drivers, DC-DC converters PARTMARKING DETAIL FZT690B
FZT690B
C
E C B VALUE 45 45 5 6 3 2 -55 to +150 UNIT V V V A A W °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
Collector-Base Breakdown Voltage Collector-EmitterBreakdown Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times V(BR)CBO 45 V(BR)CEO 45 V(BR)EBO 5 ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 500 400 150 50 150 200 16 33 1300
SYMBOL MIN. TYP. MAX UNIT CONDITIONS. . V V V 0.1 0.1 0.1 0.5 0.9 0.9
A A
IC=100 A IC=10mA* IE=100 A VCB=35V VEB=4V IC=0.1A, IB=0.5mA* IC=1A, IB=5mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA,VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=3A, VCE=2V*
V V V V
fT Cibo Cobo ton toff
MHz IC=50mA,VCE=5V,f=50MHz pF pF ns ns VEB=0.5V, f=1MHz VCB=10V, f=1MHz ……
