器件名称: 2SA1810
功能描述: Silicon PNP Epitaxial
文件大小: 32.84KB 共6页
简 介:2SA1810
Silicon PNP Epitaxial
Application
High frequency amplifier
Features
Excellent high frequency characteristics fT = 300 MHz typ High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ Suitable for wide band video amplifier
Outline
TO-126 MOD
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1. Emitter 2. Collector 3. Base
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3
2SA1810
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
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Ratings –200 –200 –5 –0.2 –0.5 1.25 10 150 –55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min –200 –200 –5 —
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Typ — — — — — — — 300 5.0
Max — — — –10 200 –1.0 –1.0 — —
Unit V V V A
Test conditions I C = –10 A, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 A, IC = 0 VCB = –160 V, IE = 0 VCE = –5 V, IC = –10 mA
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: B 60 to 120 V(BR)EBO I CBO hFE* VBE VCE(sat) fT Cob
60 — — 200 —
V V MHz pF
VCE = –5 V, IC = –30 mA I C = –30 mA, IB = –3 mA VCE = –20 V, IC = –30 mA VCB = –30 V, IE = 0, f = 1 MHz
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