器件名称: FZT956
功能描述: SOT223 PNP SILICON PLANAR HIGH CURRENT
文件大小: 235.67KB 共5页
简 介:SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 – MARCH 2005 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps PARTMARKING DETAILS – DEVICE TYPE IN FULL COMPLEMENTARY TYPES – FZT955 - FZT855 FZT956 - N/A
FZT955 FZT956
C
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg -10 -4 3 -55 to +150 FZT955 -180 -140 -6 -5 -2 FZT956 -220 -200 UNIT V V V A A W °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum
3 - 284
FZT955
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO MIN. -180 -180 -140 -6 TYP. -210 -210 -170 -8 -50 -1 -50 -1 -10 -30 -70 -110 -275 -970 -830 100 100 75 200 200 140 10 110 40 68 1030 -60 -120 -150 -370 -1110 -950 MAX. UNIT CONDITIONS. V V V V nA IC=-100 A IC=-1 A, RB ≤ 1k IC=-10mA* IE=-100 A VCB=-150V VCB=-150V,Tamb=100°C VCB=-150V VCB=-150V,Tamb=100°C VEB=-6V IC=-100mA, IB=-5mA* IC=-500mA,IB……
