器件名称: FZT1047A
功能描述: SOT223 NPN SILICON PLANAR
文件大小: 132KB 共4页
简 介:SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 1 - AUGUST 1997 FEATURES * * * * * * VCEO = 10V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 44m at 5A
FZT1047A
C
E C B SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE 35 10 5 20 5 500 2.5 -55 to +150 UNIT V V V A A mA W °C
FZT1047A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
VALUE
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage
SYMBOL MIN. V(BR)CBO VCES VCEO VCEV 35 35 10 35 5 TYP. 65 55 16 60 8.9 0.3 0.3 0.3 25 50 140 220 925 890 280 290 300 200 60 430 440 450 330 110 150 85 130 230 110 10 10 10 40 70 200 350 1000 975 MAX.
UNIT V V V V V nA nA nA mV mV mV mV mV mV
CONDITIONS. IC=100A IC=100A IC=10mA IC=100A, VEB=1V IE=100A VCB=20V VEB=4V VCES=20V IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=15mA* IC=5A, IB=25mA* IC=5A, IB=25mA* IC=5A, VCE=2V* IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=5A, VCE=2V* IC=20A, VCE=2V*
Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Curre……
