器件名称: FZT651
功能描述: SOT223 NPN SILICON PLANAR
文件大小: 105.72KB 共2页
简 介:SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS
ISSUE 2 FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE FZT751 PARTMARKING DETAIL FZT651
FZT651
C
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. V(BR)CBO 80 V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 80 40 140 0.12 0.43 0.9 0.8 200 200 170 80 175 45 800 30 60 5 0.1 10 0.1 0.3 0.6 1.25 1 300 MHz ns ns pF TYP. SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MAX. UNIT V V V
A A A
VALUE 80 60 5 6 3 2 -55 to +150 CONDITIONS. IC=100A IC=10mA* IE=100A
UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Switching Times Output Capacitance
V V V V
VCB=60V VCB=60V,Tamb=100°C VEB=4V IC=1A, IB=100mA* IC=3A, IB=300mA* IC=1A, IB=100mA* IC=1A, VCE =2V* IC=50mA, VCE =2V* IC=500mA, VCE =2V* IC=1A, VCE =2V* IC=2A, VCE =2V* IC=100mA, VCE =5V f=100MHz IC=500mA, VCC =10V IB1=IB2=50mA VCB =10V, f=1MHz
fT t on t off C……
