器件名称: SB160-T3
功能描述: 1.0A SCHOTTKY BARRIER DIODE
文件大小: 62.54KB 共4页
简 介:WTE
POWER SEMICONDUCTORS
SB120 – SB1100
Pb
1.0A SCHOTTKY BARRIER DIODE
Features
! ! Schottky Barrier Chip Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications D
A
C
Mechanical Data
! ! ! ! ! ! ! Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.34 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4
DO-41 Dim Min Max 25.4 — A 4.06 5.21 B 0.71 0.864 C 2.00 2.72 D All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TL = 100°C Symbol VRRM VRWM VR VR(RMS) IO
@TA=25°C unless otherwise specified
SB120 SB130 SB140 20 14 30 21 40 28
SB150 SB160 50 35 1.0 60 42
SB180 SB1100 80 56 100 70
Unit V V A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage @IF = 1.0A @TA = 25°C @TA = 100°C
IFSM VFM IRM Cj RJL RJA Tj, TSTG……
