器件名称: FZT1147A
功能描述: PNP SILICON PLANAR MEDIUM POWER
文件大小: 105.11KB 共4页
简 介:PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997 FEATURES * VCEO = -12V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain
FZT1147A
C
E C B SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -15 -12 -5 -20 -5 -500 2.5 -55 to +150 UNIT V V V A A mA W °C
Operating and Storage Temperature Range
The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 2 inches by 2 inches
FZT1147A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
VALUE
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage
SYMBOL MIN. V(BR)CBO VCES VCEO VCEV -15 -12 -12 -12 -5 TYP. -35 -25 -25 -25 -8.5 -0.3 -0.3 -0.3 -25 -70 -90 -115 -250 -950 -905 270 250 200 150 90 450 400 340 245 145 50 115 80 150 220 -100 -100 -100 -50 -110 -130 -170 -400 -1050 -1000 MAX.
UNIT V V V V V nA nA nA mV mV mV mV mV mV mV
CONDITIONS. IC=-100A IC=-100A IC=-10mA * IC=-100A, VEB=+1V IE=-100A VCB=-12V VEB=-4V VCE=-10V IC=-0.1A, IB=-1.0mA* IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-6mA* IC=-2A, IB=-20mA* IC=-5A, IB=-50mA* IC=-5A, IB=-50mA* IC=-5A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2A, VCE=-2V* IC=-……
