器件名称: SB10015M
功能描述: Low IR Schottky Barrier Diode 15V, 1.0A Rectifier
文件大小: 42.2KB 共3页
简 介:Ordering number : ENA0444
SB10015M
SANYO Semiconductors
DATA SHEET
SB10015M
Applications
Low IR Schottky Barrier Diode
15V, 1.0A Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
Small switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle Conditions Ratings 15 17 1.0 10 --55 to +150 --55 to +150 Unit V V A A °C °C
Electrical Characteristics at Ta=25°C
Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Therrmal Resistance Symbol VR VF1 VF2 IR C trr Rth(j-a) IR=0.1mA IF=0.5A IF=1.0A VR=7.5V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Mounted in Cu-foiled area of 0.72mm2!0.03mm on glass epoxy board Conditions Ratings min 15 0.43 0.49 20 10 185 0.48 0.54 3 typ max Unit V V V A pF ns °C / W
Marking : SL
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applica……