器件名称: 2SC4541_04
功能描述: Power Amplifier Applications Power Switching Applications
文件大小: 171.27KB 共5页
简 介:2SC4541
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4541
Power Amplifier Applications Power Switching Applications
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) High speed switching time: tstg = 0.5 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1736 Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC PC (Note) Tj Tstg
2
Rating 80 50 6 3 0.6 500 1000 150 55 to 150
Unit V V V A A mW mW °C °C
JEDEC JEITA TOSHIBA
― SC-62 2-5K1A
Weight: 0.05 g (typ.)
Note: Mounted on a ceramic substrate (250 mm × 0.8 t)
1
2004-07-07
2SC4541
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton 20 s INPUT Switching time Storage time tstg IB1 IB2 Fall time tf IB1 = IB2 = 75 mA, DUTY CYCLE ≤ 1% IB1 IB2 Test Condition VCB = 80 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 100 mA VCE = 2 V, IC = 2 A IC = 1.5 A, IB = 75 mA IC = 1.5 A, IB = 75 mA VCE……
