器件名称: 2N4915
功能描述: SILICON EPITAXIAL NPN TRANSISTOR
文件大小: 187.81KB 共3页
简 介:SILICON EPITAXIAL NPN TRANSISTOR 2N4915
Low Collector Saturation Voltage. Hermetic TO3 Metal Package. Designed For General Purpose, Switching and Power Amplifier Applications Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 80V 80V 5V 5A 1.0A 87.5W 0.5W/°C -65 to +200°C -65 to +200°C
THERMAL PROPERTIES
Symbols
RθJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
2
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8302 Issue 1 Page 1 of 3
Website: http://www.semelab-tt.com
SILICON EPITAXIAL NPN TRANSISTOR 2N4915
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
V(BR)CEO ICEV ICEO ICBO IEBO hFE
(1) (1)
Par……
