器件名称: MR18R1628EG0-CT9
功能描述: Key Timing Parameters
文件大小: 442.28KB 共16页
简 介:MR16R1624(8/G)EG0 MR18R1624(8/G)EG0
Change History
Version 0.1 (December 2003) - Preliminary
* First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet
Version 1.0 (May 2004)
* Eliminate "Preliminary"
Page 0
Version 1.0 May 2004
MR16R1624(8/G)EG0 MR18R1624(8/G)EG0
(16Mx16)*4(8/16)pcs RIMM Module based on 256Mb E-die, 32s banks,16K/32ms Ref, 2.5V (16Mx18)*4(8/16)pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V
Overview
The RIMM module is a general purpose high- performance memory module suitable for use in a broad range of applications including computer memory, personal computers, workstations and other applications where high bandwidth and low latency are required. The RIMM module consists of 256/288Mb devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers at 0.94 ns per two bytes (7.5ns per 16 bytes). The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM device's 32-bank architecture supports up to four simultaneous transactions per device. RDRAM
Key Timing Parameters/Part Numbers
The foll……
