器件名称: 1N4004
功能描述: SILICON RECTIFIER DIODES
文件大小: 54.36KB 共2页
简 介:1N4001 - 1N4007 BY133
PRV : 50 - 1300 Volts Io : 1.0 Ampere
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free
SILICON RECTIFIER DIODES
DO - 41
0.107 (2.7) 0.080 (2.0)
1.00 (25.4) MIN.
0.205 (5.2) 0.166 (4.2)
0.034 (0.86) 0.028 (0.71)
1.00 (25.4) MIN.
MECHANICAL DATA :
* Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.34 gram
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 75 °C Maximum Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at I F = 1.0 Amp. Maximum DC Reverse Current Ta = 25 °C at rated DC Blocking Voltage Ta = 100 °C Typical Reverse Revcovery Time (IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.) Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range
SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1……
