器件名称: 2SA1615-Z
功能描述: PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
文件大小: 118.88KB 共6页
简 介:DATA SHEET
SILICON POWER TRANSISTORS
2SA1615, 1615-Z
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed.
FEATURES
Large current capacity: IC(DC): 10 A, IC(pulse): 15 A High hFE and low collector saturation voltage: hFE = 200 MIN. (@VCE = 2.0 V, IC = 0.5 A) VCE(sat) ≤ 0.25 V (@IC = 4.0 A, IB = 0.05 A)
QUALITY GRADES
Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Ta = 25°C)** PT (Tc = 25°C) Tj Tstg Ratings 30 20 10 10 15 0.5 1.0 15 150 55 to +150 Unit V V V A A A W W °C °C
* PW ≤ 10 ms, duty cycle ≤ 50% ** Printing board mounted
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