器件名称: 2SC2855
功能描述: Silicon NPN Epitaxial
文件大小: 45.58KB 共10页
简 介:2SC2855, 2SC2856
Silicon NPN Epitaxial
Application
Low frequency low noise amplifier Complementary pair with 2SA1190 and 2SA1191
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SC2855, 2SC2856
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC2855 90 90 5 100 –100 400 150 –55 to +150 2SC2856 120 120 5 100 –100 400 150 –55 to +150 Unit V V V mA mA mW °C °C
2
2SC2855, 2SC2856
Electrical Characteristics (Ta = 25°C)
2SC2855 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE*
1
2SC2856 Max Min — — — 0.1 0.1 800 120 120 5 — — 250 Typ — — — — — — Max Unit — — — 0.1 0.1 800 V V V A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 70 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA*2 I C = 10 mA, IB = 1 mA*2
Typ — — — — — —
90 90 5 — — 250 — — — — — —
VCE(sat)
0.05 0.10 — 0.7 310 3 1.0 — — — — — — — —
0.05 0.10 V 0.7 310 3 1.0 — — V MHz pF dB dB
Base to emitter saturation VBE(sat) voltage Gain bandwidth product Collector output capacitance Noise figure fT Cob NF
VCE = 6 V, IC = 10 mA VC……
