器件名称: 2SC2854
功能描述: Silicon NPN Epitaxial
文件大小: 24.35KB 共5页
简 介:2SC2853, 2SC2854
Silicon NPN Epitaxial
Application
Low frequency amplifier Complementary pair with 2SA1188 and 2SA1189
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SC2853, 2SC2854
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC2853 90 90 5 100 –100 400 150 –55 to +150 2SC2854 120 120 5 100 –100 400 150 –55 to +150 Unit V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
2SC2853 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE*
1
2SC2854 Max Min — — — 0.1 0.1 800 120 120 5 — — 250 Typ — — — — — — Max Unit Test conditions — — — 0.1 0.1 800 V V V A A I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 70 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA*2 I C = 10 mA, IB = 1 mA*2
Typ — — — — — —
90 90 5 — — 250 — — — —
VCE(sat) VBE(sat) fT
0.05 0.10 — 0.7 310 3 1.0 — — — — —
0.05 0.10 V 0.7 310 3 1.0 — — V
MHz VCE = 6 V, IC = 10 mA pF VCB = 10 V, IE = 0, f = 1 MHz
Collector output capacitance Cob
Notes: 1. The 2SC2853 and 2SC2854 ……
