器件名称: 2SC2853ETZ-E
功能描述: Silicon NPN Epitaxial
文件大小: 169.97KB 共7页
简 介:2SC2853
Silicon NPN Epitaxial
REJ03G0708-0300 (Previous ADE-208-1078A) Rev.3.00 Aug.10.2005
Application
Low frequency amplifier
Outline
RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1))
1. Emitter 2. Collector 3. Base
3 2 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 90 90 5 100 –100 400 150 –55 to +150 Unit V V V mA mA mW °C °C
Rev.2.00 Aug 10, 2005 page 1 of 6
2SC2853
Electrical Characteristics
(Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Min 90 90 5 — — 400 — — — — Typ — — — — — — 0.05 0.7 310 3 Max — — — 0.1 0.1 800 0.10 1.0 — — Unit V V V A A V V MHz pF Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 A, IC = 0 VCB = 70 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 6 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz
Rev.2.00 Aug 10, 2005 page 2 of 6
2SC2853
Main Characteristics
Maximum Collector Dissipation Curve
Collector Power Dissipation……
