器件名称: MJE2955T
功能描述: TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 196.1KB 共1页
简 介:DC COMPONENTS CO., LTD.
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MJE2955T
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier and switching applications.
TO-220AB
Pinning
1 = Base 2 = Collector 3 = Emitter
.405(10.28) .380(9.66) .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .295(7.49) .220(5.58)
Absolute Maximum Ratings(TA=25
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
o
C) Rating -70 -60 -5 -10 -6 75 +150 -55 to +150 Unit V V V A A W
o o
.625(15.87) .570(14.48) 1 2 3
Symbol VCBO VCEO VEBO IC IB PD TJ TSTG
.350(8.90) .330(8.38)
.640 Typ (16.25)
.055(1.40) .045(1.14) .037(0.95) .030(0.75)
.562(14.27) .500(12.70)
.100 Typ (2.54)
.024(0.60) .014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO ICEX ICEO IEBO VCE(sat)1 VCE(sat)2 VBE(on) hFE1 hFE2 fT 380s, Duty Cycle 2%
Min -70 -60 -5 20 5 2
Typ -
Max -1 -1 -0.7 -5 -1.1 -8 -1.8 100 -
Unit V V V mA mA mA mA V V V -
Test Conditions IC=-10mA, IE=0 IC=-200mA, IB=0 IE=-1mA, IC=0 VCB=-70V, IE=0 VCE=-70V, VEB(off)=-1.5V VCE=-30V, IB=0 VEB=-5V, IC=0 IC=-4A, IB=-400mA IC=-10A, IB=-3.3A IC=-4A, VCE=-4V IC=-4A, VCE=-4V IC=-10A, VCE=-4V
Collector-Base Breakdown Volatge Colle……
