器件名称: MJD32C
功能描述: TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 244.26KB 共1页
简 介:DC COMPONENTS CO., LTD.
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MJD32C
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in general purpose amplifier and switching applications.
TO-252(DPAK)
Pinning
1 = Base 2 = Collector 3 = Emitter
.268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 .228(5.80) .213(5.40) 1 .035 Max (0.90) .110(2.80) .087(2.20) .091 Typ (2.30) .024(0.60) .018(0.45) 2 3 .059(1.50) .035(0.90) .063(1.60) .055(1.40) .077(1.95) .065(1.65) .022(0.55) .018(0.45)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
Symbol VCBO VCEO VEBO IC PD TJ TSTG
Rating -100 -100 -5 -3 15 +150 -55 to +150
Unit V V V A W
o o .032 Max (0.80)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO ICES ICEO IEBO VCE(sat) VBE(on) hFE1 hFE2 fT 380s, Duty Cycle 2%
(1)
Min -100 -100 25 10 3
Typ -
Max -20 -50 -1 -1.2 -1.8 50 -
Unit V V A A mA V V MHz
Test Conditions IC=-1mA, IE=0 IC=-30mA, IB=0 VCE=-100V, VBE=0 VCE=-60V, IB=0 VEB=-5V, IC=0 IC=-3A, IB=-375mA IC=-3A, VCE=-4V IC=-1A, VCE=-4V IC=-3A, VCE=-4V IC=-0.5A, VCE=-10V, f=1MHz
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Vol……
