器件名称: MJD122
功能描述: TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
文件大小: 244.33KB 共1页
简 介:DC COMPONENTS CO., LTD.
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MJD122
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for use in general purpose amplifier and low speed switching applications.
TO-252(DPAK)
Pinning
1 = Base 2 = Collector 3 = Emitter
.268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 .063(1.60) .055(1.40) .077(1.95) .065(1.65) .022(0.55) .018(0.45)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
Symbol VCBO VCEO VEBO IC PD TJ TSTG
Rating 100 100 5 8 20 +150 -55 to +150
Unit V V V A W
o o .032 Max (0.80) 1 .035 Max (0.90) 2 3
.228(5.80) .213(5.40) .059(1.50) .035(0.90)
.110(2.80) .087(2.20) .091 Typ (2.30) .024(0.60) .018(0.45)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(sat)1 VCE(sat)2 VBE(sat) VBE(on) hFE1 hFE2 Cob 380s, Duty Cycle 2%
Min 100 100 5 1K 100 -
Typ -
Max 10 10 2 2 4 4.5 2.8 12K 200
Unit V V V A A mA V V V V pF IC=1mA
Test Conditions IC=30mA IE=1mA VCB=100V VCE=50V VEB=5V IC=4A, IB=16mA IC=8A, IB=80mA IC=8A, IB=80mA IC=4A, VCE=4V IC=4A, VCE=4V IC=8A, VCE=4V VCB=10V, f=1MHz
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cu……
