器件名称: MID31C
功能描述: TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
文件大小: 222.78KB 共1页
简 介:DC COMPONENTS CO., LTD.
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MID31C
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in general purpose amplifier and switching applications.
TO-251
Pinning
1 = Base 2 = Collector 3 = Emitter
.268(6.80) .252(6.40) .217(5.50) .205(5.20) 2
.022(0.55) .018(0.45) .063(1.60) .055(1.40)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
.284(7.20) .268(6.80)
Symbol VCBO VCEO VEBO IC PD TJ TSTG
Rating 100 100 5 3 15 +150 -55 to +150
Unit V V V A W
o o .032 Max (0.80) .035 Max (0.90)
1
2
3 .059(1.50) .035(0.90) .256 Min (6.50) .024(0.60) .018(0.45)
C
.181 Typ (4.60)
.095(2.40) .087(2.20)
C
Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO ICES ICEO IEBO VCE(sat) VBE(on) hFE1 hFE2 fT 380s, Duty Cycle 2%
(1)
Min 100 100 25 10 3
Typ -
Max 20 50 1 1.2 1.8 50 -
Unit V V A A mA V V MHz
Test Conditions IC=1mA, IE=0 IC=30mA, IB=0 VCE=100V, VEB=0 VCE=60V, IB=0 VEB=5V, IC=0 IC=3A, IB=375mA IC=3A, VCE=4V IC=1A, VCE=4V IC=3A, VCE=4V IC=0.5A, VCE=10V, f=1MHz
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Volta……
