器件名称: MID122
功能描述: TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
文件大小: 223.27KB 共1页
简 介:DC COMPONENTS CO., LTD.
R
MID122
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for use in general purpose amplifier and low speed switching applications.
TO-251
Pinning
1 = Base 2 = Collector 3 = Emitter
.268(6.80) .252(6.40) .217(5.50) .205(5.20) 2
.022(0.55) .018(0.45) .063(1.60) .055(1.40)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
.284(7.20) .268(6.80)
Symbol VCBO VCEO VEBO IC PD TJ TSTG
Rating 100 100 5 8 20 +150 -55 to +150
Unit V V V A W
o o .032 Max (0.80) .035 Max (0.90)
1
2
3 .059(1.50) .035(0.90) .256 Min (6.50) .024(0.60) .018(0.45)
C
.181 Typ (4.60)
.095(2.40) .087(2.20)
C
Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(sat)1 VCE(sat)2 VBE(sat) VBE(on) hFE1 hFE2 Cob 380s, Duty Cycle 2%
Min 100 100 5 1K 100 -
Typ 130
Max 10 10 2 2 4 4.5 2.8 12K -
Unit V V V A A mA V V V V pF IC=1mA
Test Conditions IC=30mA IE=1mA VCB=100V VCE=50V VEB=5V IC=4A, IB=16mA IC=8A, IB=80mA IC=8A, IB=80mA IC=4A, VCE=4V IC=4A, VCE=4V IC=8A, VCE=4V VCB=10V, f=1MHz
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff ……
