器件名称: 2SA1585E
功能描述: TRANSISTOR
文件大小: 224.16KB 共3页
简 介:JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
C
2SA1585E
TRANSISTOR
WBFBP-03A
(1.6×1.6×0.5) unit: mm
TOP
DESCRIPTION PNP Epitaxial planar type Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:AEQ, AER, AES C
B
1. BASE 2. EMITTER 3. COLLECTOR
E C
BACK
E
B
AEQ
B E MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Value -20 -20 -6 -2 150 150 -55-150 ℃ ℃ Units V V V A mW
ELECTRICAL CHARACTERISTICS (Ta=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat
unless otherwise specified)
Test conditions MIN -20 -20 -6 -0.1 -0.1 120 560 -0.5 240 35 V MHz pF TYP MAX UNIT V V V A A IC= -50A , IE=0 IC= -1mA , IB=0 IE=- 50A, IC=0 VCB=-20V , IE=0 VEB= -5V , IC=0 VCE=-2 V, IC= -0.1A IC= -2A, IB=-0.1A VCE=-2V, IC=-0.5A f=100MHz VCB=-10V,IE=0,f=1MHz
fT
Cobo
CLASSIFICATION OF hFE
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