器件名称: MSA1162YT1G
功能描述: General Purpose Amplifier Transistors
文件大小: 47.26KB 共2页
简 介:MSA1162GT1, MSA1162YT1 General Purpose Amplifier Transistors
PNP Surface Mount
Features http://onsemi.com
COLLECTOR 3
Moisture Sensitivity Level: 1 ESD Rating: TBD PbFree Packages are Available
MAXIMUM RATINGS (TA = 25°C)
Rating CollectorBase Voltage CollectorEmitter Voltage EmitterBase Voltage Collector Current Continuous Collector Current Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 60 50 7.0 100 200 Unit Vdc Vdc Vdc mAdc mAdc 2 2 BASE
1 EMITTER 3 1
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 55 to +150 Unit mW °C °C
SC59 CASE 318D STYLE 1
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
62x M G G 1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic CollectorEmitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 10 mAdc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 mAdc, IC = 0) CollectorBase Cutoff Current (VCB = 45 Vdc, IE = 0) CollectorEmitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) MSA1162YT1 MSA1162……
