器件名称: IXTP1R6N100D2
功能描述: Depletion Mode MOSFET
文件大小: 184.56KB 共5页
简 介:Preliminary Technical Information
Depletion Mode MOSFET
IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2
VDSX ID(on)
RDS(on)
= > ≤
1000V 1.6A 10Ω
N-Channel
TO-252 (IXTY)
G S
D (Tab)
Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C
Maximum Ratings 1000 ±20 ±30 100 - 55 ... +150 150 - 55 ... +150 V V V W °C °C °C °C °C Nm/lb.in. g g g
G DS D (Tab) G S D (Tab)
TO-263 AA (IXTA)
TO-220AB (IXTP)
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220
300 260 1.13 / 10 0.35 2.50 3.00
G = Gate S = Source
D = Drain Tab = Drain
Features Normally ON Mode International Standard Packages Molding Epoxies Meet UL 94 V-0 Flammability Classification V - 4.5 V Advantages Easy to Mount Space Savings High Power Density Applications Audio Amplifiers Start-Up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSX VGS(off) IGSX IDSX(off) RDS(on) ID(on) VGS = - 5V, ID = 250μA VDS = 25V, ID = 100μA VGS = ±20V, VDS = 0V VDS = VDSX, VGS= - 5V VGS = 0V, ID = 0.8A, Note 1 VGS = 0V, VDS = 50V, Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. 1000 - 2.5
±100 nA 2 μA 25 μ A 10 1.6 Ω A
2009 IXYS CORPORATION, All Rights Reserved
DS100185A(12/09)
IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Ciss Coss Cr……
