器件名称: 2SC2732
功能描述: Silicon NPN Epitaxial
文件大小: 36.47KB 共7页
简 介:2SC2732
Silicon NPN Epitaxial
Application
UHF frequency converter
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC2732
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 25 4 20 150 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 25 4 — — 30 700 — — Typ — — — — — 60 1000 0.5 7.0 Max — — — 0.5 5 — — 0.8 — MHz pF dB Unit V V V A V Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 10 V, IC = 0 I C = 10 mA, IB = 1 mA VCE = 10 V, IC = 3 mA VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 12 V, IC = 1 mA, f = 900 MHz, f OSC = 930 MHz (0dBm) , f out = 30 MHz VCC = 12 V, IC = 1 mA, f = 900 MHz, f OSC = 930 MHz (0dBm) , f out = 30 MHz
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Conversion gain V(BR)EBO I CBO VCE(sat) hFE fT Cob CG
Noise figure
NF
—
10.0
—
dB
Note: Marking is “EC”.
2
2SC2732
DC Current Transfer Ratio vs. Collector Current Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 150 DC Current Transfer Ratio hFE 100 VCE = 1……
