器件名称: 2SA1485
功能描述: Silicon PNP Epitaxial
文件大小: 28.45KB 共6页
简 介:2SA1485
Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SA1485
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –200 –200 –5 –100 200 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min –200 –200 –5 — 100 — — Typ — — — — — — — Max — — — –500 250 –0.5 –1.0 V V Unit V V V A Test conditions I C = –10 A, IE = 0 I C = –0.5 mA, RBE = ∞ I E = –10 A, IC = 0 VCE = –200 V, RBE = ∞ VCE = –12 V, IC = –2 mA*1 I C = –30 mA, IB = –3 mA*1 VCE = –12 V, IC = –2 mA*1
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Note: 1. Pulse test V(BR)EBO I CEO hFE VCE(sat) VBE
2
2SA1485
Maximum Collector Dissipation Curve Collector power dissipation PC (mW) 300 Collector current IC (mA) Typical Output Characteristics –100
–1
–80
0
–5
.0
–2. 0
PC = 0 20
200
–1.0
–0.5
m
–60
W
–40
–0.2 –0.1 mA
100
–20 IB = 0
Ta = 25°C
0
50 100 150 Ambient Temperature Ta (°C)
0
–1 –2 –3 –4 –5 Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics –100 DC current transfer ratio hFE –50 V……
