器件名称: 2SA1390
功能描述: Silicon PNP Epitaxial
文件大小: 23.87KB 共5页
简 介:2SA1390
Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
SPAK
1
23
1. Emitter 2. Collector 3. Base
2SA1390
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –35 –35 –4 –500 300 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min –35 –35 –4 — — 60 10 — Typ — — — — –0.2 — — –0.64 Max — — — –0.5 –0.6 320 — — V Unit V V V A V Test conditions I C = –10 A, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 A, IC = 0 VCB = –20 V, IE = 0 I C = –150 mA, IB = –15 mA*2 VCE = –3 V, IC = –10 mA VCE = –3 V, IC = –500 mA*2 VCE = –3 V, IC = –10 mA
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio DC current transfer ratio Base to emitter voltage V(BR)EBO I CBO VCE(sat) hFE1* 1 hFE2 VBE
Notes: 1. The 2SA1390 is grouped by hFE1 as follows. 2. Pulse test B 60 to 120 C 100 to 200 D 160 to 320
See characteristic curves of 2SA673.
2
2SA1390
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300
200
100
0
100 150 50 Ambient Temperature Ta (°C)
3
4.2 Max 1.8 Max 3.2 Max
2.2 Max
Unit: mm
0.45 ± 0.1
14.5 Min
0.6
0.6 Max
0.4 ± 0.1
1.27 1.27
2.5……
