器件名称: 2SA1374
功能描述: Silicon PNP Epitaxial
文件大小: 24.15KB 共5页
简 介:2SA1374
Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
SPAK
1
23
1. Emitter 2. Collector 3. Base
2SA1374
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –55 –55 –5 –100 –30 300 150 –55 to +150 Unit V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min –55 –55 –5 — —
1
Typ — — — — — — –0.66 –0.1 250 2.5
Max — — — –0.1 –0.05 500 –0.75 –0.5 — —
Unit V V V A A
Test conditions I C = –10 A, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 A, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IE = 0 VCE = –12 V, IC = –2 mA
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: C 160 to 320 D 250 to 500 V(BR)EBO I CBO I EBO hFE* VBE VCE(sat) fT Cob
160 — — — —
V V MHz pF
VCE = –12 V, IC = –2 mA I C = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA VCB = –10 V, IE = 0, f = 1 MHz
1. The 2SA1374 is grouped by hFE as follows.
See characteristic curves of 2SA836.
2
2SA1374
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300
200
100
0
100 150 50 Ambi……
