器件名称: 2SC2620QCTL-E
功能描述: Silicon NPN Epitaxial Planar
文件大小: 95.36KB 共8页
简 介:2SC2620
Silicon NPN Epitaxial Planar
REJ03G0704-0200 (Previous ADE-208-1071) Rev.2.00 Aug.10.2005
Application
VHF amplifier, Local oscillator
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 20 100 150 –55 to +150 Unit V V V mA mW °C °C
Rev.2.00 Aug 10, 2005 page 1 of 7
2SC2620
Electrical Characteristics
(Ta = 25°C)
Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product fT Collector output capacitance Cob Note: 1. The 2SC2620 is grouped by hFE as follows. Grade B C Mark QB QC hFE 60 to 120 100 to 200 Min 30 20 4 — — 60 — — — — Typ — — — — — — 0.17 0.72 940 0.9 Max — — — 0.5 0.5 200 — — — — Unit V V V A A V V MHz pF Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 A, IC = 0 VCB = 10 V, IC = 0 VEB = 2 V, IC = 0 VCE = 6 V, IC = 1 mA IC = 20 mA, IB = 4 mA VCE = 6 mA, IC = 1 mA VCE = 6 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz
Rev.2.00 Aug 10, 2005 page 2 of 7
2SC2620
Main……
