器件名称: 2SC2619FCTR-E
功能描述: Silicon NPN Epitaxial
文件大小: 199.07KB 共9页
简 介:2SC2619
Silicon NPN Epitaxial
REJ03G0703-0200 (Previous ADE-208-1070) Rev.2.00 Aug.10.2005
Application
High frequency amplifier
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3 1 2
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 30 5 100 150 150 –55 to +150 Unit V V V mA mW °C °C
Rev.2.00 Aug 10, 2005 page 1 of 8
2SC2619
Electrical Characteristics
(Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 VCE(sat) VBE fT Cob NF Min 30 30 5 — — 60 — — — — — Typ — — — — — — — — 230 — 5.0 Max — — — 0.5 0.5 200 1.1 0.75 — 3.5 — Unit V V V A A V V MHz pF dB Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 A, IC = 0 VCB = 20 V, IC = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 2 mA, f = 1 MHz, Rg = 500
Note: 1. The 2SC2619 is grouped by hFE as follows. Grade B C Mark FB FC hFE 60 to 120 10……
