器件名称: 2N3905_01
功能描述: PNP General Purpose Amplifier
文件大小: 63.37KB 共6页
简 介:2N3905
2N3905
C
BE
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40 40 5.0 200 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
2N3905 625 5.0 83.3 200
Units
mW mW/ °C °C/W °C/W
2001 Fairchild Semiconductor Corporation
2N3905, Rev A
2N3905
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff ……