器件名称: KSR2113
功能描述: Switching Application
文件大小: 46.87KB 共3页
简 介:KSR2113
KSR2113
Switching Application (Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K, R2=47K) Complement to KSR1113
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit
Marking
R1 B R2
C
R6 3
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
E
Value -50 -50 -10 -100 200 150 -55 ~ 150
Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE(sat) fT Cob VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC= -10A, IE=0 IC= -100A, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V IC=-5mA VCB= -10V, IE=0 f=1.0MHz VCE= -5V, IC= -100A VCE= -0.2V, IC= -10mA 1.5 0.042 2.2 0.047 -0.5 -1.1 2.9 0.052 200 5.5 68 -0.3 V MHz pF V V K Min. -50 -50 -0.1 Typ. Max. Units V V A
2002 Fairchild Semiconductor Corporation
Rev. A3, November 2002
KSR2113
Package Dimensions
SOT-23
0.20 MIN 2.40
±0.10
0.40 ±0.03
1.30
±0.10
0.45……
