器件名称: KSR2009
功能描述: Switching Application
文件大小: 32.88KB 共4页
简 介:KSR2009
KSR2009
Switching Application (Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K) Complement to KSR1009
1
TO-92
1. Emitter 2. Collector 3. Base
Equivalent Circuit C
R B
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -40 -5 -100 300 150 -55 ~ 150
E
Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE (sat) Cob fT R Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Resistor Test Condition IC= -100A, IE=0 IC= -1mA, IB=0 VCB= -30V, IE=0 VCE= -5V, IC= -1mA IC= -10mA, IB= -1mA VCB= -10V, IE=0 f=1MHz VCE= -10V, IC= -5mA 3.2 5.5 200 4.7 6.2 100 Min. -40 -40 -0.1 600 -0.3 V pF MHz K Typ. Max. Units V V A
2002 Fairchild Semiconductor Corporation
Rev. A2, October 2002
KSR2009
Typical Characteristics
10k
-1000
VCE(sat)[mV], SATURATION VOLTAGE
VCE = - 5V R = 4.7K
IC = 10IB R = 4.7k
hFE, DC CURRENT GAIN
1k
-100
100
-10
10 -0.1
-1 -1 -10 -100 -1 -10 -100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1.……
