器件名称: KSR1101
功能描述: Switching Application
文件大小: 56.27KB 共4页
简 介:KSR1101
KSR1101
Switching Application (Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7K, R2=4.7K) Complement to KSR2101
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R0 1
R1 B R2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 10 100 200 150 -55 ~ 150
E
Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE(sat) fT Cob VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10A, IE=0 IC=100A, IB=0 VCB=40V, IE=0 VCE=5V, IC=10mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz VCE=5V, IC=100A VCE=0.3V, IC=20mA 3.2 0.9 4.7 1 0.5 3 6.2 1.1 250 3.7 20 0.3 V MHz pF V V K Min. 50 50 0.1 Typ. Max. Units V V A
2002 Fairchild Semiconductor Corporation
Rev. A2, October 2002
KSR1101
Typical Characteristics
1000
100
V CE = 5V R 1 = 4.7K R 2 = 4.7K
VI(on)[V], INPUT VOLTAGE
VCE =0.3V R1 = 4.7K R2 = 4.……
