器件名称: IRFP22N60KPBF
功能描述: HEXFET Power MOSFET
文件大小: 175.95KB 共8页
简 介:IRFP22N60KPbF
SMPS MOSFET
Applications l Hard Switching Primary or PFS Switch l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free
l
PD - 94876
HEXFET Power MOSFET
VDSS
600V
RDS(on) typ.
240m
ID
22A
Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case )
TO-247AC
Max.
22 14 88 370 2.9 ± 30 15 -55 to + 150 300
Units
A W W/°C V V/ns
°C
Avalanche Characteristics
Symbol
EAS IAR EAR
Parameter
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
––– ––– –––
Max.
380 22 37
Units
mJ A mJ
Thermal Resistance
Symbol
RθJC RθCS RθJA
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
––– 0.24 –––
Max.
0.34 ––– 40
Units
°C/W
www.irf.com
1
12/9/03
IRFP22N60KPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Sou……
