器件名称: IDT70V7599S_09
功能描述: HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
文件大小: 230.29KB 共22页
简 介:
HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7599S
Features:
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128K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 2K x 36 banks – 4 megabits of memory on chip Bank access controlled via bank address pins High-speed data access – Commercial: 3.4ns (200MHz)/3.6ns (166MHz)/ 4.2ns (133MHz) (max.) – Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.) Selectable Pipelined or Flow-Through output mode Counter enable and repeat features Dual chip enables allow for depth expansion without additional logic Full synchronous operation on both ports – 5ns cycle time, 200MHz operation (14Gbps bandwidth) – Fast 3.4ns clock to data out
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– 1.5ns setup to clock and 0.5ns hold on all control, data, and address inputs @ 200MHz – Data input, address, byte enable and control registers – Self-timed write allows fast cycle time Separate byte controls for multiplexed bus and bus matching compatibility LVTTL- compatible, 3.3V (±150mV) power supply for core LVTTL compatible, selectable 3.3V (±150mV) or 2.5V (±100mV) power supply for I/Os and control signals on each port Industrial temperature range (-40°C to +85°C) is available at 166MHz and 133MHz Available in a 208-pin Plastic Quad Flatpack (PQFP), 208-pin fine pitch Ball Grid Array (fpBGA), and 256-pin Ball Grid Array (BGA) Supports JTAG features compliant with IEEE 1149.1
Functional Block Diagram
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