器件名称: H11F1TM
功能描述: Photo FET Optocouplers
文件大小: 245.3KB 共10页
简 介:H11F1M, H11F2M, H11F3M Photo FET Optocouplers
May 2007
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Features
As a remote variable resistor: ■ ≤ 100 to ≥ 300M ■ ≥ 99.9% linearity ■ ≤ 15pF shunt capacitance ■ ≥ 100G I/O isolation resistance As an analog switch: ■ Extremely low offset voltage ■ 60 Vpk-pk signal capability ■ No charge injection or latch-up ■ ton, toff ≤ 15S ■ UL recognized (File #E90700)
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General Description
The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.
Applications
As a remote variable resistor: ■ Isolated variable attenuator ■ Automatic gain control ■ Active filter fine tuning/band switching As an analog switch:
■ Isolated sample and hold circuit ■ Multiplexed, optically isolated A/D conversion
Packages
Schematic
ANODE 1 6 OUTPUT TERM.
CATHODE 2
5
3
4
OUTPUT TERM.
2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0
www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Absolute Maximum Ratings (TA = 25°C unless otherwise specied) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the par……
