器件名称: FM280-M
功能描述: SILICON EPITAXIAL PLANCE TYPE
文件大小: 129.91KB 共2页
简 介:FM220-M thru FM2100-M
SILICON EPITAXIAL PLANCE TYPE
SOD-123
0.154(3.9) 0.138(3.5) 0.012(0.3) Typ .
0.071(1.8) 0.055(1.4)
0.126(3.2) 0.110(2.8 ) 0.067(1.7) 0.051(1.3) 0.035(0.9) Typ . 0.035(0.9) Typ .
Dimensions in inches and (millimeters)
FEATURES
Plastic package has Underwriters Laboratory Flammability classification 94V-0 Utilizing Fame Retardant Epoxy Molding Compound For surface mount applications Exceeds environmental standards of MIL-S-19500/228 Low leakage current.
MECHANICAL DATA
Case Molded plastic, SOD-123/MINI-SMA Terminals Solder plated, solderable per MIL-STD-750, Method 2026 Polarity Indicated by cathode band Mounting Position Any Weight 0.04grams
MAXIMUM RATINGS (at TA=25 C unless otherwise noted)
o
PARAMETER Forward rectified current Forward surge current See Fig.1
CONDITIONS
SYMBOL IO IFSM
Min.
Typ.
Max.
UNITS
A A mA mA
0
2.0 50 0.5 10 85 160 -55 +150
8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) VR=VRRM TA=250C VR=VRRM TA=100 C Junction to ambient
0
Reverse current Thermal resistance Storage temperature
IR RJA CJ TSTG
C/W pF
0
Diode junction capacitance F=1MHz and applied 4vDC reverse voltage
C
SYMBOLS FM220-M FM230-M FM240-M FM250-M FM260-M FM280-M FM2100-M
MARKING CODE 22 23 24 25 26 28 20
VRRM (V) 20 30 40 50 60 80
*1
VRMS (V)
*2
VR (V) 20 30 40 50 60 80
*3
VF (V)
*4
Operating Temperature (0C)
14 21 28 35 42 56 70
0.5
-55 to + 125
0.7 -55 to + 150 0.85
100
100
*1 Repetitive peak reverse peak r……
