器件名称: FM120-N
功能描述: CHIIIP SCHOTTKY BARRIIIER RECTIIIFIIIER
文件大小: 213.61KB 共3页
简 介:FM120-N THRU FM1100-N
CHIP SCHOTTKY BARRIER RECTIFIER
1.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V
SOD-323
0.106 (2.7) 0.091 (2.3) 0.012(0.3) Typ.
0.057 (1.45) 0.041 (1.05)
0.047 (1.2) 0.031 (0.8)
0.016(0.4) Typ.
0.016(0.4) Typ.
FEATURES
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Very tiny plastic SMD package. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of MIL-STD-19500 /228
MECHANICAL DATA
Epoxy : UL94-V0 rated flame retardant Case : Molded plastic, SOD-323 Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band Mounting Position : Any Weight : Approximated 0.008 gram
MAXIMUM RATING
PARAMETER Forward rectified current Forward surge current
(AT T A=25 oC unless otherwise noted)
CONDITIONS See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) V R = V RRM T A = 25 OC V R = V RRM T A = 125 OC Junction to ambient f=1MHz and applied 4V DC reverse voltage
Symbol IO I FSM IR R èJA CJ T STG
MIN.
TYP.
MAX. 1.0 30 0.5 10
UNIT A A
Reverse current Thermal resistance Diode junction capacitance Storage tem……
